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           RB886G Diodes Rev.A 1/2 Schottky barrier diode RB886G 』Applications 』External dimensions (Unit : mm) 』Land size figure (Unit : mm) VMD2 0.5 1.2 0.5 High frequency detection 』Features 1) Small mold type. (VMD2) 2) Low Ct and high detection efficiency. 』Construction Silicon epitaxial planar 』Structure ROHM : VMD2 dot (year week factory) 0.13±0.03 0.5±0.05 0.27±0.03 0.6±0.05 1.0±0.05 1.4±0.05 』Taping specification (Unit : mm) 0.76±0.1 4±0.1 4±0.1 2±0.05 φ1.5+0.1 0 3.5±0.05 1.75±0.1 8.0±0.3 0.1 0.18±0.05 0.65±0.05 φ0.5 0.4 2±0.05 0.3 1.11±0.05 2.1±0.1 』Absolute maximum ratings (Ta=25°C) Symbol Unit VRm V VR V IF mA Tj ℃ Tstg ℃ 』Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit VF --0.35VIF=1mA Reverse current IR - - 120 μA VR=5V Capacitance between terminals Ct - 0.53 0.8 pF VR=1V , f=1MHz Conditions Forward voltage Parameter Junction temperature Storage temperature 125 -40 to +125 Parameter Reverse voltage Forward current Limits 5 10 Reverse voltage 15 |